Periodic patterning of silicon by direct nanosecond laser interference ablation

The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm−2, 1.3 J cm−2, 2.0 J cm−2) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm−2, probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate.

► Silicon solar grade wafers are processed to decrease their reflectivity. ► Direct ablation by laser interference is used as the structuring technique. ► Three different structures obtained: periodical bumps, nanoripples, microripples. ► Silicon reflectance diminishes probably due to the presence of nanoripples.