کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367091 1388361 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface analysis of the nanostructured W-Ti thin film deposited on silicon
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Surface analysis of the nanostructured W-Ti thin film deposited on silicon
چکیده انگلیسی

The W-Ti thin films are deposited by the dc Ar+ sputtering of W(70%)-Ti(30%) a.t. target on silicon substrates. The surface composition and structure of the thin film, previously exposed to air, was carried out. The surface structure was undertaken using grazing incidence X-ray diffraction (GIXRD), and compared to that of the thin film interior. The surface morphology was determined by the Scanning Tunneling Microscopy (STM). The surface composition and chemical bonding of elements on the Ti-W film were analyzed by X-ray photoelectron spectroscopy (XPS) and Low Energy Ion Scattering (LEIS). The measurements show that the overlayer of metallic oxides TiO2 and WO3 is formed. The first atomic layer is occupied by TiO2 only, and its thickness is estimated to about 3.2 ± 0.4 nm. The strong surface segregation of Ti is triggered by the surface oxidation, which is confirmed by the thermodynamical considerations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 12, 15 April 2007, Pages 5196-5202
نویسندگان
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