کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367135 1388361 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Molecular dynamics simulation of deposition and etching of Si bombarding by energetic SiF
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Molecular dynamics simulation of deposition and etching of Si bombarding by energetic SiF
چکیده انگلیسی

In this study, SiF interaction with amorphous Si surface at normal incidence was investigated using molecular dynamics simulation at 300 and 600 K. The incident energies of 50, 100 and 200 eV were used. The results show that the deposition rate is not sensitive to the incident energy, while with increasing the surface temperature, the deposition rate decreases. The etch yield is sensitive to the incident energy and the surface temperature. The etch yield increases with increasing incident energy and temperature. After bombarding, a SixFy interfacial layer is formed. The interfacial layer thickness increases with increasing incident energy mainly through enhanced penetration of the silicon lattice. In the interfacial layer, for SiFx (x = 1-3) species, SiF is dominant and only little SiF3 is present. At the outmost and innermost of the interfacial layer, SiF species is dominant. Most of SiF3 species is concentrated above the initial surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 12, 15 April 2007, Pages 5467-5472
نویسندگان
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