A different approach in sample preparation method for metallic contamination study by ToF-SIMS and TXRF

We propose a methodology to realize reliable reference samples for ToF-SIMS quantitative analysis of metallic contaminants. The procedure consists of spinning a Co contaminated solution, for which the contaminant concentration has been previously determined by ICP-MS, on a clean Si-wafer with a thin surface oxide obtained by SC1 treatment. We have compared the ToF-SIMS results with TXRF and we have demonstrated the validity of the procedure. We have also evidenced the effects of sample aging on the measurements showing that contaminant migration towards the interface between oxide and silicon can significantly impact on the quantification correctness.

- We propose a method to realize reliable reference samples for ToF-SIMS quantitative analysis of metallic contaminants.
- We compare ToF-SIMS and TXRF results.
- We study the effects of sample aging.
- The contaminant migration towards the interface between oxide and silicon significantly impacts the quantification correctness.