کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367463 | 1388366 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy](/preview/png/5367463.png)
چکیده انگلیسی
Epitaxial growth characteristics of α-MnS on GaAs(1 0 0) substrates have been investigated by X-ray diffraction and double crystal rocking curve measurements. Growth of stoichiometric α-MnS films has been performed by hot-wall epitaxy using Mn and ZnS as a source of sulfur. The films on GaAs(1 0 0) at low substrate temperature exhibit multiphase crystal structures of zincblende and rocksalt, and the main structure is changed to rocksalt with increasing substrate temperature. Photoluminescence spectrum of the α-MnS epilayer at 5 K exhibits broad emission bands, which are attributed to Mn2+ ions. The band gap energy of the α-MnS epilayer at room temperature was also estimated to be about 3.3 eV by reflection.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 7, 30 January 2007, Pages 3521-3524
Journal: Applied Surface Science - Volume 253, Issue 7, 30 January 2007, Pages 3521-3524
نویسندگان
Y.-M. Yu, D.-J. Kim, Y.D. Choi, C.-S. Kim,