کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367598 | 1388368 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation](/preview/png/5367598.png)
High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of â¼8Â ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600Â nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20Â mJ/cm2. A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.
Journal: Applied Surface Science - Volume 255, Issue 10, 1 March 2009, Pages 5537-5541