کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367614 1388369 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
چکیده انگلیسی

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 6, 15 January 2006, Pages 2153-2158
نویسندگان
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