Synthesis and properties of boron doped ZnO nanorods on silicon substrate by low-temperature hydrothermal reaction

Boron doped ZnO nanorods were fabricated by hydrothermal technique on silicon substrate covered with a ZnO seed layer. It is found that the concentration of boric acid in the reaction solution plays a key role in varying the morphology and properties of the products. The growth rate along the [0 0 0 1] orientation (average size in diameter) of the doped ZnO nanorods decreased (increased) with the increase of boric acid concentration. Based on the results of XRD, EDX and XPS, it is demonstrated that the boron dopants tend to occupy the octahedral interstice sites. The photoluminescence of the ZnO nanorods related to boron doping are investigated.

Research highlights► The boron doped ZnO nanorods on silicon are synthesized by hydrothermal technique. ► The variations of growth and properties of the products are related to boron doping level. ► The incorporation of boron in the ZnO lattice is to occupy the octahedral interstice site. ► The proper boron doping level improves the intensity ratio of UV to visible emissions of ZnO nanorods.