Structure and optoelectronic properties of multi-element oxide thin film

This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb)1 − xOx films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb)1 − xOx films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb)1 − xOx films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62 × 1020 and 1.37 × 1017 cm−3, and conductivities (σ) of 57.2 and 9.45 × 10−3 (Ω cm)−1, and indirect band gaps of 1.69 and 2.26 eV, respectively. They are n-type oxide semiconductors.

Research highlights► The (ZnSnCuTiNb)1 − xOx films are all of amorphous without any multi-phase structure. ► By controlling the oxygen content which changes electron binding energy of the cations, we can alter the electrical and optical properties of the films. ► The (ZnSnCuTiNb)1 − xOx films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. ► These films have carrier concentrations of 2.62 × 1020 and 1.37 × 1017 cm−3, and conductivities (σ) of 57.2 and 9.45 × 10−3 (Ω cm)−1, and indirect band gaps of 1.69 and 2.26 eV, respectively.