کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367687 1388370 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method
چکیده انگلیسی

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. Taguchi method was used to find the optimal deposition parameters including oxygen partial pressure, argon partial pressure, substrate temperature, and sputtering power. By employing the analysis of variance, we found that the oxygen and argon partial pressures were the most influencing parameters on the electrical properties of ZnO:Ga films. Under the optimized deposition conditions, the ZnO:Ga films showed acceptable crystal quality, lowest electrical resistivity of 2.61 × 10−4 Ω cm, and high transmittance of 90% in the visible region.

Research highlights► ZnO:Ga thin films are prepared by DC reactive magnetron sputtering. ► The Taguchi method is applied to find the optimal growth conditions. ► ZnO:Ga films have acceptable structural, electrical, and optical properties.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 14, 1 May 2011, Pages 6125-6128
نویسندگان
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