کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367979 | 1388380 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal process and surface damage of GaAs induced by 532 nm continuous laser
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal process and surface damage of GaAs induced by 532 nm continuous laser Thermal process and surface damage of GaAs induced by 532 nm continuous laser](/preview/png/5367979.png)
چکیده انگلیسی
The thermal damage process of gallium arsenide (GaAs) induced by 532Â nm continuous laser is presented in this work. The surface damage in the form of decomposing was detected and determined previous to the melting damage by the real-time observation of surface reflectivity. The evaporation of As induced the decrease of As content in the irradiated surface. The microscopic morphology and composition analysis of the damaged surfaces at different moments during the whole thermal process were performed with an electron probe microscope.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 5, 30 December 2007, Pages 1373-1376
Journal: Applied Surface Science - Volume 254, Issue 5, 30 December 2007, Pages 1373-1376
نویسندگان
Haifeng Qi, Qingpu Wang, Yongfu Li, Xingyu Zhang, Zejin Liu, Yurong Wang, Sasa Zhang, Wei Xia, Guofan Jin,