Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition

The correlation between the resistivity and the structure/composition in the aluminum doped zinc oxide (AZO) films fabricated by the ion beam co-sputtering deposition at room temperature was investigated. The various compositions of AZO films were controlled by the sputtered area ratio of Al to Zn target. The structure, Al concentrations and resistivities of the as-deposited films were determined by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS) and four-point probe station, respectively. The lowest resistivity of the deposited film was 5.66 × 10−4 Ω-cm at the 0.7 wt.% aluminum concentration. The most intense ZnO (0 0 2) diffraction peak, the largest grain size, the longest mean free path, and the highest free carrier concentration in the film result in the lowest resistivity of 5.66 × 10−4 Ω-cm at room temperature; simultaneously, the thermal stability of the resistivity of the AZO film as a function of the sample temperature was investigated. Below 200 °C the film's resistivity was almost kept at a fixed value and the lowest resistivity of 4.64 × 10−4 Ω-cm at 247 °C was observed.

Research highlights▶ AZO film fabricated by ion beam co-sputtering deposition at room temperature. ▶ The lowest resistivity of the deposited film is 5.66 × 10−4 Ω-cm at the 0.7 wt.% Al concentration. ▶ The AZO film has a quiet stable thermal stability of the resistivity below 200 °C and the lowest resistivity of 4.64 × 10−4 Ω-cm at 247 °C in situ measurement.