Synthesis of amorphous carbon nanowalls by DC-PECVD on different substrates and study of its field emission properties

Amorphous carbon thin films with quasi vertical nanowall-like morphologies have been synthesized via direct current plasma enhanced chemical vapor deposition on both copper and silicon substrates with acetylene as a carbon precursor. The deposition temperature and pressure were maintained at 750 °C and 5 mbar respectively. The morphology of the as-prepared samples has been investigated with the help of a field emission scanning electron microscope and an atomic force microscope, both revealing nanowall-like morphologies with thicknesses of the walls ∼6-15 nm. The as-prepared carbon nanowalls showed good field electron emission with a turn-on field as low as 1.39 V/μm. The effect of inter-electrode distance on the field electron emission has also been studied in detail.

Research highlights▶ Amorphous carbon quasi vertical nanowalls have been synthesized via DC-PECVD on both copper and silicon substrates. ▶ The morphology of the as-prepared samples has been investigated with the help of FESEM and AFM. ▶ The as-prepared carbon nanowalls showed good field electron emission. ▶ The effect of inter-electrode distance on the field electron emission has also been studied in detail.