کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368316 | 1388390 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Investigation of Ni/Ta contacts on 4H silicon carbide upon thermal annealing Investigation of Ni/Ta contacts on 4H silicon carbide upon thermal annealing](/preview/png/5368316.png)
Nickel and Tantalum thin films with 3:5 thickness ratios were deposited in succession onto 4H-SiC substrate at room temperature. The samples were then heated in situ in vacuum at 650, 800 or 950 °C for 30 min. Glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the interfacial reactions and electrical properties. Amorphous Ni-Ta can be formed by solid-state reaction at 650 °C. The minor dissolved Ni in the Ta metal promotes the reaction between Ta and SiC. With increasing annealing temperature up to 950 °C, the dominant carbide changes from Ta2C to TaC and a layer structure is developed. Electrical measurements show that ohmic contact is formed after annealing at or above 800 °C.
Journal: Applied Surface Science - Volume 254, Issue 1, 31 October 2007, Pages 139-142