کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368317 1388390 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)
چکیده انگلیسی

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF2/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeFx complexes which desorb at these temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 1, 31 October 2007, Pages 143-147
نویسندگان
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