کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368433 | 1388395 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 17, 30 June 2007, Pages 7157-7161
Journal: Applied Surface Science - Volume 253, Issue 17, 30 June 2007, Pages 7157-7161
نویسندگان
Byeong-Yun Oh, Min-Chang Jeong, Jae-Min Myoung,