کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368574 1388400 2006 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Band edge electronic structure of transition metal/rare earth oxide dielectrics
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Band edge electronic structure of transition metal/rare earth oxide dielectrics
چکیده انگلیسی

This article addresses band edge electronic structure of transition metal/rare earth (TM/RE) non-crystalline and nano-crystalline elemental and complex oxide high-k dielectrics for advanced semiconductor devices. Experimental approaches include X-ray absorption spectroscopy (XAS) from TM, RE and oxygen core states, photoconductivity (PC), and visible/vacuum ultra-violet (UV) spectroscopic ellipsometry (SE) combined with ab initio theory is applied to small clusters. These measurements are complemented by Fourier transform infra-red absorption (FTIR), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Two issues are highlighted: Jahn-Teller term splittings that remove d-state degeneracies of states at the bottom of the conduction band, and chemical phase separation and crystallinity in Zr and Hf silicates and ternary (Zr(Hf)O2)x(Si3N4)y(SiO2)1−x−y alloys. Engineering solutions for optimization of both classes of high-k dielectric films, including limits imposed on the continued and ultimate scaling of the equivalent oxide thickness (EOT) are addressed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 1, 31 October 2006, Pages 311-321
نویسندگان
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