کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368708 | 1388405 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Fabrication and vacuum annealing of transparent conductive Ga-doped Zn0.9Mg0.1O thin films prepared by pulsed laser deposition technique Fabrication and vacuum annealing of transparent conductive Ga-doped Zn0.9Mg0.1O thin films prepared by pulsed laser deposition technique](/preview/png/5368708.png)
In this study, highly transparent conductive Ga-doped Zn0.9Mg0.1O (ZMO:Ga) thin films have been deposited on glass substrates by pulsed laser deposition (PLD) technique. The effects of substrate temperature and post-deposition vacuum annealing on structural, electrical and optical properties of ZMO:Ga thin films were investigated. The properties of the films have been characterized through Hall effect, double beam spectrophotometer and X-ray diffraction. The experimental results show that the electrical resistivity of film deposited at 200 °C is 8.12 Ã 10â4 Ω cm, and can be further decreased to 4.74 Ã 10â4 Ω cm with post-deposition annealing at 400 °C for 2 h under 3 Ã 10â3 Pa. In the meantime, its band gap energy can be increased to 3.90 eV from 3.83 eV. The annealing process leads to improvement of (0 0 2) orientation, wider band gap, increased carrier concentration and blue-shift of absorption edge in the transmission spectra of ZMO:Ga thin films.
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8657-8661