کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368969 1388414 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 Ã— 1 observed with scanning tunneling microscopy
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 Ã— 1 observed with scanning tunneling microscopy
چکیده انگلیسی

Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 × 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873-1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49-TiSi2 and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti-Si.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 4, 30 November 2009, Pages 1191-1195
نویسندگان
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