AlF3 film deposited by IAD with end-Hall ion source using SF6 as working gas

A novel and effective process to fabricate high quality fluoride thin films was presented. Aluminum fluoride films deposited by a conventional thermal evaporation with an ion-assisted deposition (IAD) using SF6 as a working gas at around room temperature were investigated. In this study, the optimal voltage and current, 50 V and 0.25 A, were found according to the optical properties of the films: high refractive index (1.489 at 193 nm), low optical absorption and extinction coefficient (<10−4 at 193 nm) in the UV range. The physical properties of the film are high packing density and amorphous without columnar structure. It was proved that using SF6 working gas in IAD process is a good choice and significantly improves the quality of AlF3 films.