کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369081 1388419 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of Cr dopant on the microstructure and electromigration performance of Cu interconnects
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Effects of Cr dopant on the microstructure and electromigration performance of Cu interconnects
چکیده انگلیسی

Cu and Cu(Cr) alloy films were deposited on SiO2 substrates by magnetron sputtering. The microstructure and electromigration performance of films were investigated. A small amount of Cr refines the Cu grains and improves the surface morphology of Cu films. After annealing at 450 °C, in contrast to the Cu film with large lateral grown grains, the Cu(Cr) alloy film exhibits fine columnar grains with a 〈1 1 1〉 preferred orientation. Most of Cr in the annealed Cu(Cr) film has segregated at the film surface and the film/substrate interface. The grain boundary grooving at the film/substrate interface is completely prohibited for Cu(Cr) films. As a result, the electromigration lifetimes of annealed Cu(Cr) lines are 10-100 times longer than those of annealed Cu lines. The final resistivity of the annealed Cu(Cr) film is 2.55 μΩ cm which is close to that of the annealed Cu film. With the improved surface morphology and high electromigration resistance, the dilute Cu(Cr) alloy film can be a viable interconnect material or a seed layer in the Cu-damascene technology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 22, 30 August 2009, Pages 9273-9278
نویسندگان
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