کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369121 | 1388420 | 2006 | 8 صفحه PDF | دانلود رایگان |

The influences of chemical treatment and thermal annealing of AlxGa1âxN (x = 0.20) have been investigated by X-ray photoelectron spectroscopy (XPS). XPS analysis showed that successive chemical treatments and annealing produced changes in the stoichiometry of the AlxGa1âxN surface, with the surface concentration of N increasing and Al and Ga decreasing with increasing temperature. Band bending occurred at the AlxGa1âxN surface, in parallel with the observed changes in stoichiometry. These results are discussed in the context of the creation of surface states via the activation of vacancies and induced by defects. These findings point towards the possibility of selecting and/or engineering the band structure at AlxGa1âxN surfaces through a combination of surface preparation and annealing.
Journal: Applied Surface Science - Volume 252, Issue 14, 15 May 2006, Pages 5189-5196