کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369121 1388420 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of chemical treatment and thermal annealing on AlxGa1−xN surfaces: An XPS study
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The influence of chemical treatment and thermal annealing on AlxGa1−xN surfaces: An XPS study
چکیده انگلیسی

The influences of chemical treatment and thermal annealing of AlxGa1−xN (x = 0.20) have been investigated by X-ray photoelectron spectroscopy (XPS). XPS analysis showed that successive chemical treatments and annealing produced changes in the stoichiometry of the AlxGa1−xN surface, with the surface concentration of N increasing and Al and Ga decreasing with increasing temperature. Band bending occurred at the AlxGa1−xN surface, in parallel with the observed changes in stoichiometry. These results are discussed in the context of the creation of surface states via the activation of vacancies and induced by defects. These findings point towards the possibility of selecting and/or engineering the band structure at AlxGa1−xN surfaces through a combination of surface preparation and annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 14, 15 May 2006, Pages 5189-5196
نویسندگان
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