کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369222 | 1388425 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultraviolet laser microstructuring of silicon and the effect of laser pulse duration on the surface morphology
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The study of the laser pulse duration effect on the silicon micro-spikes morphology is presented. The microcones were produced by ultraviolet (248Â nm) laser irradiation of doped Si wafers in SF6 environment. The laser pulse duration was adjusted at 450Â fs, 5Â ps and 15Â ns. We have analyzed the statistical nature of the spikes' morphological characteristics, such as periodicity and apex angle by exploiting image processing techniques, on SEM images of the irradiated samples. The correlation of the quantitative morphological characteristics with the laser parameters (pulse duration, laser fluence and number of pulses) provides new insight on the physical mechanisms, which are involved on the formation of Si microcones.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 13, 30 April 2006, Pages 4462-4466
Journal: Applied Surface Science - Volume 252, Issue 13, 30 April 2006, Pages 4462-4466
نویسندگان
E. Skantzakis, V. Zorba, D.G. Papazoglou, I. Zergioti, C. Fotakis,