کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369228 1388425 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural modification of laser annealed a-Si1−xCx:H films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Structural modification of laser annealed a-Si1−xCx:H films
چکیده انگلیسی

Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 13, 30 April 2006, Pages 4493-4496
نویسندگان
, , , , , ,