Laser ablation lithography on thermoelectric semiconductor

In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu2Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns. Surface temperature evolution and transient reflectivity are studied during laser treatment. Creation of Cu islands in the maximal intensity of interference pattern was found.