کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369842 | 1388460 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy](/preview/png/5369842.png)
چکیده انگلیسی
Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870âK with Ni2Si, NiSi and NiSi2 phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi2 phase takes place at 1170âK. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 8, 15 February 2007, Pages 3799-3802
Journal: Applied Surface Science - Volume 253, Issue 8, 15 February 2007, Pages 3799-3802
نویسندگان
S. Abhaya, G. Amarendra, S. Kalavathi, Padma Gopalan, M. Kamruddin, A.K. Tyagi, V.S. Sastry, C.S. Sundar,