کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369933 1388465 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure and composition of the segregated Cu in V2O5/Cu system
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Structure and composition of the segregated Cu in V2O5/Cu system
چکیده انگلیسی

We have investigated segregation of copper at the surface of V2O5 films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu2O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V2O5 layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu2O is the original cause of the segregation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 5, 30 December 2006, Pages 2581-2588
نویسندگان
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