کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369960 | 1388465 | 2006 | 6 صفحه PDF | دانلود رایگان |
The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl2-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH4/H2/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl2 discharges is smooth, whereas that after etching in CH4/H2/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH4/H2/Ar also produces formation of a Zn-rich surface layer, whose thickness (â¼40Â nm) is well-above the expected range of incident ions in the material (â¼1Â nm). Such alteration of the IZO layer after etching in CH4/H2/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.
Journal: Applied Surface Science - Volume 253, Issue 5, 30 December 2006, Pages 2752-2757