کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370042 | 1388470 | 2006 | 5 صفحه PDF | دانلود رایگان |

The annealing temperature dependence of contact resistance and layer stability of ZrB2/Ti/Au and Ni/Au/ZrB2/Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at â¥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of â¼2 Ã 10â3 Ω cmâ2 was obtained for the ZrB2/Ti/Au after annealing at 800 °C while for Ni/Au/ZrB2/Ti/Au the minimum value was 10â4 Ω cmâ2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB2/Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB2/Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 1934-1938