کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5370042 1388470 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
ZrB2-based Ohmic contacts to p-GaN
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
ZrB2-based Ohmic contacts to p-GaN
چکیده انگلیسی

The annealing temperature dependence of contact resistance and layer stability of ZrB2/Ti/Au and Ni/Au/ZrB2/Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10−3 Ω cm−2 was obtained for the ZrB2/Ti/Au after annealing at 800 °C while for Ni/Au/ZrB2/Ti/Au the minimum value was 10−4 Ω cm−2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB2/Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB2/Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 1934-1938
نویسندگان
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