کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370151 | 1388475 | 2006 | 7 صفحه PDF | دانلود رایگان |
Rapid thermal oxidation of high-Ge content (Ge-rich) Si1âxGex (x = 0.85) layers in dry O2 ambient has been investigated. High-resolution X-ray diffraction (HRXRD) and strain-sensitive two-dimensional reciprocal space mapping X-ray diffractometry (2D-RSM) are employed to investigate strain relaxation and composition of as-grown SiGe alloy layers. Characterizations of ultra thin oxides (â¼6-8 nm) have been performed using Fourier transform infrared spectroscopy (FTIR) and high-resolution X-ray photoelectron spectroscopy (HRXPS). Formation of mixed oxide i.e., (SiO2 + GeO2) and pile-up of Ge at the oxide/Si1âxGex interface have been observed. Enhancement in Ge segregation and reduction of oxide thickness with increasing oxidation temperature are reported. Interface properties and leakage current behavior of the rapid thermal oxides have been studied by capacitance-voltage (C-V) and current-voltage (J-V) techniques using metal-oxide-semiconductor capacitor (MOSCAP) structures and the results are reported.
Journal: Applied Surface Science - Volume 253, Issue 3, 30 November 2006, Pages 1323-1329