Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition

Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on Pt/Ti/SiO2/Si(1 0 0) substrates by chemical solution deposition (CSD), and the dependence of ferroelectric and dielectric properties of the as-deposited BLT thin films on excess Bi content in precursor sols was studied. It is found that the prepared BLT thin film shows the best polarization-electric field, capacitance-voltage and dielectric constant (ɛr)-frequency characteristics, when the value of excess Bi content in precursor sols is 10%. In detail, its remnant polarization (2Pr) value is 40 μC/cm2, the capacitance tunability is 21% measured at room temperature under conditions of an applied voltage of 8 V and measurement frequency of 10 kHz, and the ɛr is 696 at 100 kHz frequency.