کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5370281 1388479 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of H2 plasma treatment on the field emission of amorphous GaN film
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The influence of H2 plasma treatment on the field emission of amorphous GaN film
چکیده انگلیسی
The influence of H2 plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm2 at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 2, 15 November 2006, Pages 859-862
نویسندگان
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