کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370343 | 1388483 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of β-Ga2O3 nanowires through microwave plasma chemical vapor deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga2O3) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H2O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H2O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga2O3 nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga2O3 nanowires was controlled by vapor-solid (VS) crystal growth mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 22, 15 September 2006, Pages 7930-7933
Journal: Applied Surface Science - Volume 252, Issue 22, 15 September 2006, Pages 7930-7933
نویسندگان
Feng Zhu, Zhongxue Yang, Weimin Zhou, Yafei Zhang,