کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5370430 1388494 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering
چکیده انگلیسی

Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80 W to 130 W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80 W and 130 W are close to the stoichiometry of BC3N. The sample deposited at 110 W is close to the stoichiometry of BCN. The samples deposited at 100 W and 120 W approach to BC2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4185-4189
نویسندگان
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