کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370438 | 1388494 | 2006 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation](/preview/png/5370438.png)
Amorphous-carbon (a-C) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and these amorphous carbon films were implanted with 110Â keV C+ at fluences of 1Â ÃÂ 1017Â ions/cm2. The effect of ion mixing on the surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic force microscopy (AFM), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope (SEM). The changes in chemical composition and structure were investigated by using X-ray photoelectron spectroscopy (XPS). The results show that the anti-wear life and adhesion of amorphous carbon films on the Si substrates were significantly increased by C ion implantation. The SiC chemical bonding across the interface plays a key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. The friction and wear mechanisms of amorphous carbon film under dry friction condition were also discussed.
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4236-4243