کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370479 | 1388499 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate](/preview/png/5370479.png)
چکیده انگلیسی
Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66Â eV. Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 5, 15 December 2005, Pages 1360-1367
Journal: Applied Surface Science - Volume 252, Issue 5, 15 December 2005, Pages 1360-1367
نویسندگان
Teny Theresa John, C. Sudha Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba,