کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5372683 | 1504183 | 2017 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Intense laser field effects on the intersubband optical absorption and refractive index change in the δ-doped GaAs quantum wells Intense laser field effects on the intersubband optical absorption and refractive index change in the δ-doped GaAs quantum wells](/preview/png/5372683.png)
- The peak positions of total AC shift to the red with decreasing magnitude with ILF.
- As ILF increases, RIC shifts to the red with decreasing magnitude.
- The separation between ground and first excited energy levels decreases by the increase of the laser field intensity.
In this paper, we have investigated the effects of the non-resonant intense laser field on the electronic and optical properties such as linear, nonlinear and the total optical absorption coefficient and refractive index change for transitions between two lower-lying electronic states in the GaAs-based δ-doped quantum well. Within the effective mass approximation, we calculated the eigenvalues and corresponding eigenfunctions as a function of the intense laser parameter by solving the Schrödinger equation in the laser-dressed confinement potential. The analytical expressions of the linear and third-order non-linear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The obtained results show that the separation between ground and first excited energy levels in the δ-doped quantum well decreases in energy by the increase of the laser field intensity and this effect leads to an optical red-shift in the intersubband transitions. This behavior gives us a new degree of freedom in tunability of different device applications based on the optical transitions.
Journal: Chemical Physics - Volume 487, 20 April 2017, Pages 11-15