Excitation kinetics of impurity doped quantum dot driven by Gaussian white noise: Interplay with external field

- The excitation kinetics of impurity doped quantum dot has been investigated.
- The dot is subject to Gaussian white noise.
- External oscillatory field is also applied.
- Noise strength and field intensity fabricate the kinetics.
- Role of dopant location has also been analyzed.

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by simultaneous application of Gaussian white noise and external sinusoidal field. We have considered both additive and multiplicative noise (in Stratonovich sense). The combined influences of noise strength (ζ) and the field intensity (∊) have been capsuled by invoking their ratio (η). The said ratio and the dopant location have been found to fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be widely different. The investigation reveals emergence of maximization/minimization and saturation in the excitation kinetics as a result of complex interplay between η and the dopant coordinate (r0). The present investigation is believed to provide some useful insights in the functioning of mesoscopic devices where noise plays some significant role.