Oscillatory impurity potential induced dynamics of doped quantum dots: Analysis based on coupled influence of impurity coordinate and impurity influenced domain

The pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot is explored. We have considered Gaussian impurity centers. Under a periodically fluctuating impurity potential, the system reveals a long time dynamics that is undulatory in nature. Coupled to the dopant location, the domain of influence of the impurity potential affects the separation between the eigenstates of the unperturbed system. The investigation points to a threshold value of spatial extension of impurity potential. Above this threshold value, the dopant location becomes important in monitoring the minimum value of impurity potential required to cause excitation.