کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5376211 | 1504314 | 2008 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modulation of the electronic states of 2-D single carrier quantum dots due to presence of hole doped impurity perturbations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report the effects of on- and off-center attractive impurities on regular parabolic dots and their impact on the level structures as a function of the strength of the transverse magnetic field. Information entropy, probability density and level-spacing distribution are used as keys to monitor the pattern of evolution of electronic states. The level structures are marked by crossings and anticrossings and sharply peaked level-spacing distribution functions, either at low or high field strengths confirming the presence of level repulsion. The anticipated emergence of quantum chaos as a result of hole doping is demonstrated in dots with off-centre impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics - Volume 344, Issues 1â2, 22 February 2008, Pages 61-71
Journal: Chemical Physics - Volume 344, Issues 1â2, 22 February 2008, Pages 61-71
نویسندگان
Ram Kuntal Hazra, Manas Ghosh, S.P. Bhattacharyya,