Excited state properties of novel p- and n-type organic semiconductors with an anthracene unit

Photoinduced dynamics of novel p- and n-type organic semiconductors with an anthracene unit are theoretically investigated with quantum chemistry methods. The calculated vertical absorption and fluorescence frequencies of them are consistent with the experimental data. The changing tendencies of the dihedral angles between anthracene unit and trifluoromethylphenyl (or thiophene) in the photoinduced dynamics processes (vertical absorption and vertical fluorescence) are examined from the geometries of optimized ground and excited states. To study the influence of the individual units of the derivatives to the excited state properties of the derivatives, the energies and densities of frontier orbital HOMOs and LUMOs of the individual unit and the derivatives are studied in the processes of vertical absorption and fluorescence. The excited state properties of the two derivatives in the processes of vertical absorption and fluorescence are studied with 2D and 3D real space analysis methods, which are employed to study the electron-hole coherence and the excitation delocalization (with transition density matrix method), and charge and energy transfer (with transition and charge difference density method). Overall, the computed results remain in good agreement with the relevant experimental data, and the theoretical results promote deeper understanding to the optical and electronic properties of the semiconductor in the process of photoinduced dynamics.