The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor

- We propose an approach to study the fast crystallization of GeTe using a phase change resistor (PCR) when staircase-shaped pulses are applied.
- We demonstrate that the crystallization regions widen via increasing the width of the second subpulse.
- The pulse-dependent-recrystallization-temperature after the second pulse applied is estimated via both experiment and simulation.
- We demonstrate that the crystallization of the GeTe-PCR is faster than that of GST due to the high pulse-dependent-recrystallization-temperature and low activation energy.