Upconversion luminescence of Ho3+/Yb3+ co-doped CaNb2O6 thin films

⿢Ho3+/Yb3+ co-doped CaNb2O6 thin films were deposited on Si(100) substrates by pulsed laser deposition.⿢The annealing temperature has a strong effect on the film's structure, morphology, grain size and the upconversion luminescence properties.⿢UC emission is composed of the two emission band at 549 and 671 nm corresponding to the 5F4,5S2 ⿿5I8 and 5F5⿿5I8 transitions of Ho3+ ions in Ho3+/Yb3+ co-doped CaNb2O6.