Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

- Solution-processed amorphous IZO TFTs were fabricated at 250 °C.
- The hydroxyl radical was effectively oxidized IZO thin film.
- The carbon-related compounds were dissociated by deep UV irradiation.

We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 °C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 °C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

The amorphous indium zinc oxide thin film transistors were realized at 250 °C annealing condition with deep UV irradiation under wet medium.70