Aligned Al:ZnO nanorods on Si with different barrier layers for optoelectronic applications

► Vertically aligned ZnO nanorod arrays synthesized hydrothermally at low temperature. ► Several barrier layers introduced to form the pin diode to reduce the leakage current. ► Significant reduction of photocurrent in arrays on AZO/SiO2/p-Si heterojunction. ► The reduction of photocurrent related to multiple light scattering. ► This research opens venues for optoelectronics with desirable aligned nanostructures.