Analysis of band gap formation in graphene by Si impurities: Local bonding interaction rules

► Si clusters adsorption can lead to stable band gap opening in graphene. ► The band gap formation is solely due to the nature of Si-C local interaction. ► The distorted graphene retains the linear dispersion of π and π∗ bands at K points. ► Si structure rather than periodicity can induce electronic transition in graphene. ► Size of the gap changes with cluster size.