Synthesis and vibrating properties ZnSe/Ge bi-axial heterostructural nanowires

► ZnSe/Ge nanowire heterostructures have been fabricated by one-step thermal evaporation. ► A good epitaxial relationship of (1 1 1)ZnSe//(1 1 1)Ge exists in the heterostructures interface. ► The experimental evidence suggests that the bi-axial nanowires are formed via co-growth mechanism. ► A new mode ∼263 cm−1 may be originated from the interface of heterostructural nanowires. ► The ZnSe/Ge nanowires have potential applications in solar energy conversion and nanodevices.