Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films

► Transient optical and electrical response during laser-induced crystallization of Ge2Sb2Te5 thin film was compared. ► Much little time was needed to reach equilibrium state for electrical resistance than optical reflectivity. ► The dependence of crystallization time on laser pulse fluence was given. ► A 2-dimensional percolation model can be used to explain the difference between electrical and optical transients.