کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5386953 1505078 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure of Bi3Gay(-) semiconductor clusters and the special stability of Bi3Ga2- - A gas phase Zintl analogue
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electronic structure of Bi3Gay(-) semiconductor clusters and the special stability of Bi3Ga2- - A gas phase Zintl analogue
چکیده انگلیسی

Here we present evidence that the gap between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO gap) can be tuned (1.12-1.89 eV) by changing the Ga composition of Bi3Gay anionic and neutral clusters, some of which display special stability. Collaboratively, mass spectrometry, photoelectron spectroscopy and computational results show that Bi3Ga2- is a very stable cluster with a large calculated HOMO-LUMO gap of 1.89 eV, and can be viewed as a gas phase Zintl analogue of Sn52-, already synthesized in the solution phase. The stability of Bi3Ga2- is further attributed to the fact that it has 12 valence electrons and possesses a closo structure in agreement with Wade's rules.

It is shown that Bi3Ga, Bi3Ga2-, Bi3Ga3, Bi3Ga4- and Bi3Ga5 all are stable species with a HOMO-LUMO gap varying from 1.12 to 1.89 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics Letters - Volume 467, Issues 4–6, 5 January 2009, Pages 223-229
نویسندگان
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