Electrical and photoelectrical performances of nano-photodiode based on ZnO nanowires

A prototype nano-photodiode has been demonstrated based on heterojunctions between ZnO nanowires and p-Si substrate. The electrical and photoelectrical performances of the ZnO/Si structure have been characterized by a conductive atomic force microscopy at nanometer spatial resolution. The photoelectrical measurements demonstrate that the photodiode has high sensitivity and selectivity to UV light.